RADISYS 067-02121-0005数字量输入卡件

1.产 品 资 料 介 绍：

中文资料：

RADISYS 067-02121-0005桥接寄存器的字节序很少。DMA控制寄存器用于操作DMA引擎。这些寄存器位于离基偏移$0的位置。使用开关S7、S4和S3来确定基本地址。

反射式内存（RFM）控制和状态寄存器–RFM控制和状态注册表实现RADISYS 067-02121-0005反射式内存板特有的功能。这些功能包括RFM操作状态、VME总线中断的RFM源的详细控制以及网络中断访问。这些寄存器的位置与基准偏移1200美元。使用开关S7、S4和S3来确定基本地址。

RADISYS 067-02121-0005反射内存RAM实际板载反射内存SDRAM有两种尺寸：64兆字节或128兆字节奇偶校验。SDRAM在由开关S8指定的位置开始。与以前版本的VMIC反射内存产品不同，RFM控制和状态寄存器不会取代RAM的前40美元位置。

英文资料：

The VMEbus bridge registers have little-endian byte-ordering. The DMA Control Registers are used to operate the DMA engine. These registers are located at $0 offset from base. The base address is determined using switches S7, S4 and S3.RADISYS 067-02121-0005

Reflective Memory (RFM) Control and Status Registers – The RFM Control and Status Registers implement the functions unique to the RADISYS 067-02121-0005 Reflective Memory board. These functions include RFM operation status, detailed control of the RFM sources for the VMEbus interrupt, and network interrupt access. These registers are located at $1200 offset from base. The base address is determined using switches S7, S4 and S3.RADISYS 067-02121-0005

Reflective Memory RAM The actual on-board Reflective Memory SDRAM is available in two sizes: 64 Mbytes or 128 Mbytes with parity. The SDRAM starts at the location specified by switch S8. Unlike the previous versions of VMIC’s Reflective Memory products, the RFM Control and Status Registers do NOT replace the first $40 locations of RAM.RADISYS 067-02121-0005

2.产      品      展      示      

3.主      营      品      牌      

本篇文章出自瑞昌明盛自动化设备有限公司官网，转载请附上此链接:http://www.jiangxidcs.com