ABB DSPC452 57310303-A可编程控制器模块
•Vb OVERVOLTAGE TRIG LEVEL（Vb过电压触发电平）：一旦B相电压等于或高于此设定值，则触发跟踪存储器，所有输入上的数据将被捕获到缓冲器中。捕获的周期数取决于TRACE MEMORY USAGE（跟踪内存使用）设置点中指定的值。无论VT接线如何，均使用相位至中性电平。•Vc OVERVOLTAGE TRIG LEVEL（Vc过电压触发电平）：一旦C相电压等于或高于此设定值，则触发跟踪存储器，所有输入上的数据都被捕获到缓冲器中。捕获的周期数取决于TRACE MEMORY USAGE（跟踪内存使用）设置点中指定的值。无论VT接线如何，均使用相位至中性电平。•Va欠压触发电平：一旦A相电压等于或小于此设定值，跟踪存储器将被触发，所有输入的数据将被捕获到缓冲器中。捕获的周期数取决于TRACE MEMORY USAGE（跟踪内存使用）设置点中指定的值。
• Vb OVERVOLTAGE TRIG LEVEL: Once the phase B voltage equals or increases above this setpoint value, the trace memory is triggered and data on all inputs are captured in the buffer. The number of cycles captured depends on the value specified in the TRACE MEMORY USAGE setpoint. Phase to neutral levels are used regardless of the VT wiring. • Vc OVERVOLTAGE TRIG LEVEL: Once the phase C voltage equals or increases above this setpoint value, the trace memory is triggered and data on all inputs are captured in the buffer. The number of cycles captured depends on the value specified in the TRACE MEMORY USAGE setpoint. Phase to neutral levels are used regardless of the VT wiring. • Va UNDERVOLTAGE TRIG LEVEL: Once the phase A voltage is equal to or less than this setpoint value, the trace memory is triggered and data on all inputs are captured in the buffer. The number of cycles captured depends on the value specified in the TRACE MEMORY USAGE setpoint.
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