ABB  3BSE018298R1 DCS工控模块备件

单位条件导通电流平均值

IT（AV）3000 A正弦波，180°导通，Tc=70℃导通电流RMS 4710 A标称值峰值一周浪涌（非重复）电流ITSM 36000 A 10.0毫秒（50Hz），正弦波形状，180°导电，Tj=125 oC I平方t I 2 t 6.5x106 A2s 10毫秒闭锁电流IL 1000 mA VD=12 V；RL=12欧姆保持电流IH 200 mA VD=12 V；I=2.5 A峰值导通状态电压VTM 1.7 V ITM=3000A；Tj=25oC阈值电压，低电平VTO 0.96 V Tj=125oC斜率电阻，低电平rT 0.17 mΩ 3000A至10000A通态电流的临界上升率di/dt 200 A/s重复江苏杨捷润诺半导体有限公司电气特性和额定值KP3000-功率晶闸管选通参数符号最小最大典型值。单位条件峰值栅极功率消耗PGM 20 W平均栅极功率损耗PG（AV）4 W栅极触发电流IGT 200 mA VD=12 V；RL=3欧姆；Tj=+25 oC栅极-触发电压VGT 0.70 2.5 V VD=12 V；RL=3欧姆；Tj=+25 oC峰值负电压VGRM 5 V动态参数符号最小值最大值典型值。

机组条件延迟时间

3.0 2.5s ITM=100 A；VD=67%VDRM栅极脉冲：VG=30 V；RG=10欧姆；tr=0.1μs；tp=20μs关闭时间（VR=-5 V）tq 700s ITM=2000 A；di/dt=-10安/sVR=50伏；dV/dt=30V/sVD=67%VDRM；Tj=125 oC反向回收电荷Qrr 5500C ITM=2000Adi/dt=-10A/s；VR=50伏；Tj=125℃热特性和机械特性及额定值参数符号最小值最大值典型值。机组条件工作温度Tj-40+125 oC储存温度Tstg-40+140 oC热阻-连接到壳体RΘ（j-c）0.008 oC/W双面冷却热阻-壳体到散热器RΘhttp://www.chinarunau.com第2页共3页江苏杨捷润诺半导体有限公司KP3000大功率晶闸管外壳外形和尺寸http://www.chinarunau.com第3页，共3页2-φ3.5×2.1

Average conduction current per unit condition

IT (AV) 3000 A sine wave, 180 ° conduction, Tc=70 ℃ conduction current RMS 4710 A nominal value peak one cycle surge (non repetitive) current ITSM 36000 A 10.0 ms (50Hz), sine wave shape, 180 ° conduction, Tj=125 oC I square t I 2 t 6.5x106 A2s 10 ms locking current IL 1000 mA VD=12 V; RL=12 ohm holding current IH 200 mA VD=12 V; I=2.5 A peak conduction state voltage VTM 1.7 V ITM=3000 A; Tj=25oC threshold voltage, low level VTO 0.96 V Tj=125oC slope resistance, low level rT 0.17 m Ω 3000A to 10000A critical rise rate of on state current di/dt 200 A/s repeat the electrical characteristics and rating of Jiangsu Yangjie Runuo Semiconductor Co., Ltd. KP3000 - minimum and maximum typical value of power thyristor gating parameter symbol. Peak grid power consumption per unit condition PGM 20 W Average grid power loss PG (AV) 4 W grid trigger current IGT 200 mA VD=12 V; RL=3 ohms; Tj=+25 oC grid trigger voltage VGT 0.70 2.5 V VD=12 V; RL=3 ohms; Tj=+25 oC peak negative voltage VGRM 5 V dynamic parameter sign minimum value maximum value typical value.

Unit condition delay time

3.0 2.5s ITM=100 A； VD=67% VDRM grid pulse: VG=30 V; RG=10 ohms; tr=0.1 μ s； tp=20 μ S Closing time (VR=- 5 V) tq 700  s ITM=2000 A; Di/dt=- 10 A/ sVR=50 V; dV/dt=30V/sVD=67%VDRM； Tj=125 oC Reverse recovered charge Qrr 5500  C ITM=2000Adi/dt=- 10A/s; VR=50 V; Tj=125 ℃ typical value of minimum value and maximum value of thermal and mechanical characteristics and rating parameter symbols. Unit conditions Operating temperature Tj-40+125 oC Storage temperature Tstg-40+140 oC Thermal resistance - connected to housing R Θ (j-c) 0.008 oC/W Double sided cooling thermal resistance - shell to radiator R Θ http://www.chinarunau.com Page 2 of 3: Jiangsu Yangjie Runnuo Semiconductor Co., Ltd. KP3000 high-power thyristor enclosure outline and dimensions http://www.chinarunau.com Page 3 of 3 2- φ three point five × two point one

品牌：ABB

型号： 3BSE018298R1  

产地：瑞士

质保：365天

成色：全新/二手

发货方式：快递发货