过载瞬态仿真结果
额定稳态长时间运行时，单个IGBT芯片损耗为78.7W，单个Diode芯片损耗为23.4W。过载工况为每个芯片每10min内可允许120% 过载，过载时间为持续1min，允许连续出现过载，即1H内出现6次1.2倍过载。按1.2倍过载，单元输出电流为356.4A时，单个IGBT芯片损耗为102W，单个Diode芯片损耗为28.9W。
图8为1.2倍过载瞬态分析中，对IGBT芯片最高温度的监控曲线。从曲线可以看出，芯片在过载后第60s达到温升最高值，随后过载结束温度下降，在第450s左右，温度可以降到与稳态时温度一致。每次瞬态1.2倍过载均不会导致芯片最高温度有相对升高，说明10min内一次过载1min，有足够的时间使过载温度下降到稳态温度，不会因持续过载导致芯片最高温度叠加升高。
1.2倍过载瞬态时芯片温度曲线
1.2倍过载瞬态时芯片温度曲线
图8- 1.2倍过载瞬态时芯片温度曲线
（6）测试数据
热电偶埋在IGBT铜基板底部，热电偶通过SatlonD3和催化剂606紧固在散热器基板上，测试点为仿真温度最高的IGBT芯片正下方。
IGBT正下方铜基板测试点示意图01
IGBT正下方铜基板测试点示意图01
图9-IGBT正下方铜基板测试点示意图01
IGBT正下方铜基板测试点示意图02
IGBT正下方铜基板测试点示意图02
图10-IGBT正下方铜基板测试点示意图02
模块测试风速按5m/s，与仿真风速一致。测试时环境温度20℃，测试点1为IGBT模块的Tc温度（壳温），最高值为69℃，温升49℃。
仿真得到的模块最高壳温Tc=86.7℃，温升为46.7℃。仿真误差为5%以内，可以接受。说明仿真数据可以评估方案可行性及决定是否需要进行打样。
热电偶监测点温度
热电偶监测点温度
图11-热电偶监测点温度
3 结论
对于电力电子设备的散热设计问题，采用基于FloEFD分析的散热设计方法能较准确的评估实际工况中的温度duration of T4. This goes on and on. The time parameters caused by this are all set before leaving the factory. The process flow is as follows:
Use logo! 230rc basic model, because the time of the four time relays given in the flow chart is only set before leaving the factory, it is not equipped with text display LOGO! TD。 Therefore, 230V logo can be used! Of the product.
The digital and analog I / O allocation in application is described in the form of table.
Table 1, I / O resource allocation
Use logo! Experience of
LOGO! One of the advantages is that the text display windows are "standard keyboard characters", and Chinese characters are displayed, which is reflected by users, which is very convenient. With the continuous introduction of new versions of products, the functions and software capacity have increased. Therefore, we can also be used in more complex systems.
The function of text display is less than that of general-purpose display. If you can add the display of on / off symbols of the switching status of some soft components, such as in the form of indicator lights, it will be closer to
